Semiconductors MCQs
Semiconductors MCQs
These Semiconductors multiple-choice questions and their answers will help you strengthen your grip on the subject of Semiconductors. You can prepare for an upcoming exam or job interview with these 100+ Semiconductors MCQs.
So scroll down and start answering.
1: What do diodes do?
A. Open current flow for in all directions
B. Block current in one direction while letting current flow in another direction.
C. Close current flow in all directions
2: What is the only p-type dopant used in silicon device manufacturing?
A. Antimony
B. Phosphorus
C. Arsenic
D. Boron
3: What mathematical formula most accurately predicts the Fermi level of a semiconductor?
A. Fermi-Dirac distribution
B. Maxwell-Boltzmann distribution
C. Bose-Einstein distribution
4: Diodes and most photovoltaic cells contain which feature?
A. A p-n junction
B. An Early voltage
C. A metal-insulator-metal junction
D. A Hall effect junction
5: When silicon has been doped, what does this mean?
A. It has been melted and stirred.
B. Impurities have been added to make it less conductive.
C. Impurities have been added that alter its electronic properties in a controllable way.
D. It has had all of its impurities removed.
6: What does 'doping' do?
A. Changes a semiconductor's behavior
B. Duplicate the semiconductor
C. Oxygenate a semiconductor
D. Purifies a semiconductor
7: Can pure silicon alone be used to make a semiconductor?
A. Yes. All semiconductors are found in sand quarries.
B. No. It needs impurities to become semi-conductive.
C. Yes.
D. Yes. The purer, the better.
8: What are the two basic types of impurities used in semiconductor doping?
A. N-Type & P-Type
B. Schottky & De Forest
C. Left-handed & Right-handed
D. Intrinsic & Extrinsic
9: At which frequency, capacitive reactance equals to inductive reactance?
A. cut off frequency
B. Matching Frequency
C. Resonant Frequency
D. Tunning Frequency
10: What law predicts the future of integrated circuits?
A. Miller's
B. Marleau's
C. Moore's
D. Marchand's
11: What are the four terminals of an FET transistor?
A. Source, gate, signal, and body.
B. Sand, gate, drain, and body.
C. Source, NOR, AND, and OR.
D. Source, gate, drain, and body.
12: What is the reason for reducing drain doping in a metal-oxide semiconductor device design?
A. To increase line focus
B. To improve breakdown voltage
C. To reduce step response time
D. To reduce the buildup of calcium carbonate
13: What are the two bands in which an electron can reside?
A. Resistive and conductive
B. Gamma and delta
C. Photon and phonon
D. Valence and conduction
14: What is the simplest semiconductor device?
A. Resistors
B. Electron
C. Diode
D. Transistor
15: What is a semiconductor?
A. Half a conductor.
B. A conductor that doesn't work very well.
C. The combination of a conductive material, and an insulator.
D. Two halves of a conductor.
16: What is a common scheme of electrical polarity in a MOSFET transistor?
A. N-n-n, and p-n-p.
B. N-p-r, u-p-n
C. n-p-n, and p-n-p.
D. n-p-n, and p-n-n-p.
17: Which of the following is a type of transistor?
A. PSET
B. MTT
C. NRT
D. BJT
18: Why are semiconductors important?
A. They are not important.
B. They are large and durable.
C. They successfully replaced vacuum tubes as the primary way to compute data.
D. They replaced silicon.
19: What are the components of a MOSFET?
A. Source, drain, and gate
B. Voltage, current, and resistivity
C. Emitter, collector, and base
D. Dopant, acceptor, and donor
20: The process of deliberately adding impurities to affect conductivity is called:
A. Fabrication
B. Insertion
C. Photolithography
D. Doping
21: When infusing impurities into silicon to make a semiconductor, what is this process called?
A. Melting.
B. Cracking.
C. Doping.
D. Conducting.
22: What does BJT stand for?
A. Bimetallic Jennings transistor
B. Back justified transistor
C. Boron joint transistor
D. Bipolar junction transistor
23: What are semiconductors made out of primarily?
A. Salt.
B. Silicon.
C. Glass.
D. Rubber.
24: What does LED stand for?
A. Light Emission Device
B. Light Electromagnetic Diode
C. Light Emitting Diode
D. Light Electron Device
25: What does the acronym IGBT stand for?
A. Insulated gate bipolar transistor.
B. Intrinsic germanium-based transistor
C. Inert gate bidirectional transistor
D. Iodine graphite boron transistor
26: An electron is a _____
A. fermion
B. boson
27: What is a III-V semiconductor?
A. A semiconductor made of three parts of one element to five parts of another element
B. A semiconductor made from elements in columns III and V of the periodic table
C. A semiconductor with conduction bands at 3 eV and 5 eV
28: What type of semiconductor do you get if you dope it with boron?
A. An n-type semiconductor.
B. A boronic transistor.
C. A boric reaction transistor.
D. A p-type semiconductor.
29: Which two formulas determine the carrier distribution of a semiconductor?
A. Fermi-Dirac distribution & density of states
B. Ohm's law & Kirchhoff's current law
C. Riemann zeta function & Fourier transform
D. Bose-Einstein distribution & Bessel functions
30: The process by which electrons and holes annihilate is called:
A. Tunneling
B. Spontaneous emission
C. Initialization
D. Recombination
31: What three primary types of carrier action occur inside a semiconductor?
A. Drift, Diffusion, Recombination-Generation
B. Recombination-Generation, Dissension, Diffusion
C. Dissension, Drift, Recombination-Generation
D. Drift, Diffusion, Dissension
32: Which of the following is a voltage controlled device?
A. BJT
B. SCR
C. TRIAC
D. MOSFET
33: Where must doping be added within a semiconductor to alter their conductivity?
A. Their crystal lattice.
B. Their outside.
C. Their center.
D. Their layers.
34: What is an exciton?
A. A photon-phonon pair
B. An electron-hole pair
C. A magnetic monopole
D. A bandgap resonance
35: The wavelength of light emitted by an LED is determined by its:
A. bandgap
B. phonon frequency
C. electron effective mass
D. permittivity
36: The electron-volt is a unit of:
A. Potential
B. Energy
C. Conductivity
D. Power
37: Which concept describes the chemical potential of a semiconductor?
A. Fermi energy
B. Dirac statistics
C. Fermi level
D. Fermion level
38: What technique is commonly used to pattern semiconductors?
A. Photolithography
B. Chemical Vapor Deposition (CVD)
C. MEMS
D. Sputtering
39: In ellipsometry, the azimuth is the angle between the _______ and the plane of incidence.
A. semi-minor axis of the ellipse
B. major axis of the ellipse
C. major chord
D. minor axis of the ellipse
40: A degenerate semiconductor has which of the following characteristics?
A. All of these are characteristics of a degenerate semiconductor
B. It conducts like a metal
C. Its Fermi level is nearly equal to its conduction or valence band energy
D. It is highly doped
41: Memristors are also known as _________.
A. Metal Transistors
B. Memory Thyristors
C. Metal Resistors
D. Memory resistors
42: On a circuit board what letter usually marks a transistor?
A. L
B. Q
C. T
D. R
43: What devices are typically used to control volume in electronics?
A. Transistors
B. Inductors
C. Diodes
D. Resistors
44: What is the maximum theoretical efficiency for a single-junction silicon solar cell?
A. 17%
B. 33%
C. 52%
D. 21%
45: What are the four elements in CIGS?
A. Copper, indium, gallium, selenium
B. Cadmium, indium, germanium, sulphur
C. Copper, indium, gallium, silver
D. Carbon, iodine, germanium, sulphur
46: What is the value of kT at room temperature?
A. 1.12 eV
B. 25.6 meV
C. 15 eV
D. 137 meV
47: Which type of element is most widely used for the manufacture of semiconductor devices?
A. Group IV
B. Group V
C. Group III
D. Group VI
48: What is the term for a semiconductor device manufacturing plant?
A. Fab
B. Chip shop
C. Semiconductor production facility (SPF)
D. Platter plant
49: What is the bandgap of silicon?
A. 1.12 eV
B. 1.41 eV
C. 2.83 eV
D. 0.79 eV
50: Which semiconductor has a direct bandgap?
A. Germanium
B. Gallium arsenide
C. Silicon carbide
D. Silicon
51: What happens to electrons to cause a semiconductor to gain electric conductivity?
A. They have been delocalized.
B. They have been sped up.
C. They have been bombarded.
D. They are encircled by neutrinos.
52: What was the first transistor made of?
A. Silicon
B. Gallium arsenide
C. Germanium
D. Aluminum arsenide
53: Which of these is a common method for producing single-crystal silicon?
A. Nickel-palladium crystal catalysis
B. Schottky crystalization
C. Czochralski process
D. Chemical vapor deposition
54: A space on a wafer between die is called a(n):
A. Scribe line
B. Adhesive
C. Hexode
D. Mask
55: In a plot of carrier concentration versus temperature, which of these is NOT a distinct region?
A. Extrinsic
B. Intrinsic
C. Freeze Out
D. Melt In
56: What is the conventional unit of volume in semiconductor engineering?
A. nm^3
B. mm^3
C. m^3
D. cm^3
57: True or False? Pure Si has a low electrical resistivity at room temperature
A. True
B. False
58: Which statement is true about the Zener Effect?
A. It liberates a large number of free majority carriers
B. None of these
C. It consists of electrical breakdown in a forward biased p-n diode
D. All of these
E. It occurs in heavily doped junctions
59: What is the name of the regime in which transistors pass current?
A. Accumulation
B. Conduction
C. Inversion
D. Depletion
60: What causes particles to diffuse from regions of higher concentration to regions of lower concentration?
A. Electron density
B. Magnetic Orientation
C. Thermal Motion
D. Synthetic Osmosis
61: Which particle generally carries the most momentum?
A. A photon
B. A phonon
62: A P-type material is _____.
A. positively charged
B. negatively charged
C. electrically neutral
D. none of the above
According to the Barkhausen criterion for oscillators_______.
A – open loop gain
β – feed back factor
A.
Aβ < 1
B.
Aβ > 1
C.
Aβ = 1
D.
Aβ ≤ 1
64: If the reverse bias on the gate of an FET is increased , the width of the conducting channel will _____.
A. increase
B. decrease
C. remain constant
65: An FET has the following parameters IDSS = 32mA , VGS ( off ) = -8V , VGS = -4.5V. What will be the drain current?
A. 5.2 mA
B. 6.12 mA
C. 7.03 mA
D. 7.45 mA
66: For good stabilization of the operating point in a voltage divider bias, the current I, flowing through potential dividers R1 and R2, should be equal to or greater than _____. (IB-base current)
A. 2IB
B. 10IB
C. 4IB
D. IB/2
67: If in a transistor IE = 10.5mA , IC = 10mA,the value of β will be _____.
A. 0.2
B. 200
C. 100
D. 20
68: A triac can pass a portion of _____.
A. positive half-cycle through the load
B. negative half-cycle through the load
C. both positive and negative half-cycles through the load
D. None of the above
69: An A.C supply of 230v is applied to a half wave rectifier circuit through a transformer of turn ratio 10:1. Its D.C voltage output will be _____.
A. 5v
B. 12v
C. 10.36v
D. 5.18v
70: A vacuum tube conducts current _____.
A. from the cathode to the anode
B. from the anode to the cathode
C. in both the above directions
D. alternately in both directions
71: If a circuit of full-wave centre-tapped rectifier with capacitor filter employs a load RL = 100Ω, and C = 1050µF and the frequency is 50HZ , what would be the ripple factor?
A. 40%
B. 30%
C. 22%
D. 27%
72: A varactor diode can function as a variable capacitor with a________ forward bias.
A. very slight
B. moderate
C. heavy
73: Radio frequencies have their range above _____.
A. 20KHZ
B. 50KHZ
C. 100KHZ
D. 200KHZ
74: In the collector feedback biasing, β = 57 , RC = 1 kΩ , IB = 60µA and VCB = 4.5V. The value of the stability factor will be _____.
A. 30.4
B. 32.9
C. 57
D. 4.5
75: In the enhancement mode (MOSFET) , conductivity increases _____.
A. with the decrease in positive gate voltage
B. with the increase in positive gate voltage
C. with the decrease in negative gate voltage
D. with the increase in negative gate voltage
76: A three-stage amplifier has a first-stage voltage gain of 100, a second stage voltage gain of 200 and a third stage gain of 400. The total voltage gain in db will be _____.
A. 130 dB
B. 140 dB
C. 132 dB
D. 138 dB
77: At parallel resonance, a tuned circuit offers an impedance of _____.
A. C/LR
B. R/LC
C. L/CR
D. 2L/CR
78: An SCR is a solid state equivalent of a _____.
A. triode
B. pentode
C. thyratron
D. diode
79: In the d.c. equivalent circuit of a transistor amplifier , the capacitors are regarded as _____.
A. Open
B. Short
C. Sometimes open and sometimes short
D. Unchanged
80: The maximum efficiency of a full wave rectifier is _____.
A. 40%
B. 81.2%
C. 90%
D. 99%
81: If the collector supply voltage is 10v, the collector cut off voltage under D.C conditions will be _____.
A. 5v
B. 10v
C. 20v
D. 30v
82: If the input to an integrating circuit is a square wave, the output will be _____.
A. triangular
B. rectangular
C. saw-tooth
D. spiked
83: If in a transistor , Ic = 9.5mA , Ie = 10mA , the value of α will be _____.
A. 0.95
B. 10
C. 9.5
D. 0.095
84: In an R-C phase shift oscillator, an R-C network is designed to introduce a phase shift of _____ .
A. 300
B. 600
C. 900
D. 1800
85: If the input to a differentiating circuit is a square wave, the output will be _____.
A. rectangular
B. spiked
C. triangular
D. sinusoidal
86: For faithful amplification, VBE must not fall below _____.
A. 0.9v for si transistors
B. 0.5v for si transistors
C. 0.3v for si transistors
D. 0.7v for si transistors
87: For an R-C phase shift oscillator , the frequency of oscillation will be given as _____.
A. fo = 1/2П√RC
B. fo = 1/2П√6RC
C. fo = 1/√2ПRC
D. fo = 2/√2ПRC
88: A reversed biased P-N junction has a resistance of the order of _____.
A. Ω
B. KΩ
C. MΩ
D. mΩ
89: The impedance of a parallel tuned circuit at resonance is _____.
A. 0
B. low
C. very high
D. very low
90: A transistor amplifier has 4v,2mA as the operating point. For faithful amplification, the collector current due to signal alone should not exceed _____.
A. 2mA
B. 1mA
C. 4mA
D. 8mA
91: A D.C milliammeter connected to a half-wave rectifier supplying a maximum current of 10mA will read _____.
A. 10 mA
B. 20 mA
C. 5 mA
D. 3.18 mA
92: An SCR combines the features of_____.
A. a rectifier and an amplifier
B. a rectifier and a transistor
C. a rectifier and an oscillator
D. a rectifier and an inverter
93: Hartley oscillator is _____.
A. an RC oscillator
B. an LC oscillator
C. a Crystal oscillator
94: If in a transistor VCB= 4V , VBE = 0.7V, the VCE will be equal to _____.
A. 4.7v
B. 5.4v
C. 3.3v
D. 0.7v
95: The input and output voltages of a CE transistor amplifier are _____.
A. in phase
B. 90° out of phase
C. 180° out of phase
D. 120° out of phase
96: An FET has ________ temperature co-efficient of resistance.
A. 0
B. positive
C. negative
97: An :FET is a _____.
A. bipolar device
B. tripolar device
C. unipolar device
98: The complementary MOS(CMOS) uses _____.
A. only n-channel devices in the circuit
B. only p- channel devices in the circuit
C. both n and p channel devices in the circuit
D. None of the above
99: A 3-ohm load is coupled to a transistor amplifier through a step-down transformer. If the D.C resistance of the primary winding is 300Ω and the output resistance of the amplifier is 3KΩ, what should be the turn ratio for the transfer of maximum power?
A. Np/Ns=40
B. Np/Ns=20
C. Np/Ns=30
D. Np/Ns=10
100: The ideal value of the stability factor is _____.
A. 0
B. 10
C. 1
D. 100
List of Semiconductors MCQs Mu...
Available in:
Semiconductors MCQs
Полупроводники вопросы на русском языке
Preguntas sobre semiconductores en español
日本語での半導体に関する質問
Domande sui semiconduttori in lingua italiana
Questions sur les semi-conducteurs en langues françaises
Questões de semicondutores em línguas portuguesas
Fragen zu Halbleitern in deutschen Sprachen
中文（简体）语言的半导体问题
أسئلة حول أشباه الموصلات باللغات العربية
Soal semikonduktor dalam bahasa indonesia
Türkçe dillerinde yarı iletkenler soruları
